Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001)

被引：10
|
作者：
Ashraf, T. [1 ]
Gusenbauer, C. [1 ]
Stangl, J. [1 ]
Hesser, G. [2 ]
Wegscheider, M. [1 ]
Koch, R. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Johannes Kepler Univ Linz, Zentrum Oberflachen & Nanoanalyt, A-4040 Linz, Austria
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 04期
基金：
奥地利科学基金会;
关键词：
SUBSTRATE SURFACE RECONSTRUCTION; MAGNETIC-PROPERTIES; SPIN INJECTION; FILMS; HETEROSTRUCTURES; SEMICONDUCTOR; EVOLUTION; FE/GAAS(001); CONTACT; BARRIER;
D O I：
10.1088/0953-8984/23/4/042001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Interdiffusion during growth of Fe on As-rich GaAs(001) substrates has been investigated by real time stress measurements. Compared to Ga-rich GaAs(001), interdiffusion processes are decisively reduced. The optimum growth temperature (characterized by abrupt interfaces, pseudomorphic growth and negligible intermixing) is found to lie below 50 degrees C. At higher growth temperatures interdiffusion effects increase and eventually lead to the formation of a compact crystalline alloy layer of presumably Fe(2+x)Ga(1-x), as evidenced by transmission electron microscopy and x-ray diffraction.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] STUDY OF THE MECHANISM OF GAAS(001) MOLECULAR-BEAM EPITAXY
    MAO, HB
    LU, W
    SHEN, XC
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1995, 4 (10): : 757 - 765
  • [22] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
    Jin, Ri Guo
    Yagi, Shuhei
    Hijikata, Yasuto
    Kuboya, Shigeyuki
    Onabe, Kentaro
    Katayama, Ryuji
    Yaguchi, Hiroyuki
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 85 - 87
  • [23] Metalorganic molecular beam epitaxy of GaNAs alloys on (001)GaAs
    Uesugi, K
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 490 - 495
  • [24] Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy
    Xue, QK
    Hashizume, T
    Sakata, T
    Hasegawa, Y
    Ohno, T
    Sakurai, T
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1996, 217 : 193 - 197
  • [25] THE MICROSTRUCTURE OF FE AND AG THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS (001)
    CHIEN, CJ
    BRAVMAN, JC
    FARROW, RFC
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4343 - 4345
  • [26] GROWTH OF ALN FILMS ON GA-RICH AND AS-RICH GAAS(001) SURFACES
    SALMAGNE, SR
    MONCH, W
    SURFACE SCIENCE, 1995, 331 : 937 - 941
  • [27] Growth mechanism of beam-induced lateral epitaxy on (001)GaAs substrate in molecular beam epitaxy
    Naritsuka, S
    Suzuki, T
    Saitoh, K
    Maruyama, T
    Nishinaga, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (1-2) : 64 - 71
  • [28] Atomic structures on the GaAs(001) surface grown by molecular beam epitaxy
    Bakhtizin, RZ
    Xue, QK
    Hashizume, T
    Sakurai, T
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1998, 62 (10): : 1948 - 1953
  • [29] DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY
    VANHOVE, JM
    COHEN, PI
    LENT, CS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 546 - 550
  • [30] Atomic structures on the GaAs(001) surface grown by molecular beam epitaxy
    Bakhtizin, RZ
    Sakurai, T
    Xue, QK
    Hashizume, T
    USPEKHI FIZICHESKIKH NAUK, 1997, 167 (11): : 1227 - 1241
12345