Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001)

被引：10
作者：
Ashraf, T. [1 ]
Gusenbauer, C. [1 ]
Stangl, J. [1 ]
Hesser, G. [2 ]
Wegscheider, M. [1 ]
Koch, R. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Johannes Kepler Univ Linz, Zentrum Oberflachen & Nanoanalyt, A-4040 Linz, Austria
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 04期
基金：
奥地利科学基金会;
关键词：
SUBSTRATE SURFACE RECONSTRUCTION; MAGNETIC-PROPERTIES; SPIN INJECTION; FILMS; HETEROSTRUCTURES; SEMICONDUCTOR; EVOLUTION; FE/GAAS(001); CONTACT; BARRIER;
D O I：
10.1088/0953-8984/23/4/042001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Interdiffusion during growth of Fe on As-rich GaAs(001) substrates has been investigated by real time stress measurements. Compared to Ga-rich GaAs(001), interdiffusion processes are decisively reduced. The optimum growth temperature (characterized by abrupt interfaces, pseudomorphic growth and negligible intermixing) is found to lie below 50 degrees C. At higher growth temperatures interdiffusion effects increase and eventually lead to the formation of a compact crystalline alloy layer of presumably Fe(2+x)Ga(1-x), as evidenced by transmission electron microscopy and x-ray diffraction.
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页数：4
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