Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

被引：17

作者：

Ardaravicius, L. ^{[1
]}

Liberis, J. ^{[1
]}

Kiprijanovic, O. ^{[1
]}

Matulionis, A. ^{[1
]}

Wu, M. ^{[2
]}

Morkoc, H. ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 02期

关键词：

AlInN/AlN/GaN; semiconductor heterostructures; hot electrons; drift velocity; high electric fields; hot-phonon decay;

D O I：

10.1002/pssr.201004502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A nanosecond-pulsed current-voltage technique was applied to study hot-electron transport along the two-dimensional electron gas channel confined at a nominally undoped AlInN/AlN/GaN heterointerface. Hot-electron drift velocity was deduced under the assumptions of uniform longitudinal electric field and field-independent electron sheet density. At a fixed electric field strength, a resonance-type non-monotonous dependence of the velocity on the electron density was found in the investigated range from 1 to 1.6 x 10(13) cm(-2). When the electric field increased from 20 kV/cm to 80 kV/cm, the peak velocity increased from similar to 1.1 to 2.3 x 10(7) cm/s, and the position of the resonance shifted from similar to 1.1 x 10(13) cm(-2) to similar to 1.2 x 10(13) cm(-2), respectively. The resonance position correlates with that for the fastest decay of hot phonons known from independent experiment. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：65 / 67

页数：3

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