SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer

被引：7

作者：

Saeed, Mariam ^{[1
]}

Rogina, Maria R. ^{[1
]}

Rodriguez, Alberto ^{[1
]}

Arias, Manuel ^{[1
]}

Briz, Fernando ^{[1
]}

机构：

[1] Univ Oviedo, Dept Elect Engn, Asturias 33204, Spain

来源：

ENERGIES | 2020年 / 13卷 / 05期

关键词：

SiC devices; antiparallel diode; dual active bridge; power electronic transformer; high-frequency transformer; SOLID-STATE TRANSFORMER; DC-DC CONVERTER; PERFORMANCE CHARACTERIZATION; DESIGN;

D O I：

10.3390/en13051198

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper discusses the benefits of using silicon carbide (SiC) devices in a three-stage modular power electronic transformer. According to the requirements to be fulfilled by each stage, the second one (the DC/DC isolation converter) presents the most estimable improvements to be gained from the use of SiC devices. Therefore, this paper is focused on this second stage, implemented with a SiC-based dual active bridge. Selection of the SiC devices is detailed tackling the efficiency improvement which can be obtained when they are co-packed with SiC antiparallel Schottky diodes in addition to their intrinsic body diode. This efficiency improvement is dependent on the dual active bridge operation point. Hence, a simple device loss model is presented to assess the efficiency improvement and understand the reasons for this dependence. Experimental results from a 5-kW Dual Active Bridge prototype have been obtained to validate the model. The dual active bridge converter is also tested as part of the full PET module operating at rated power.

引用

页数：18

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