Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications

被引：2

作者：

Rehioui, Othman ^{[1
,2
]}

Bechou, Laurent ^{[1
]}

Fillardet, Thierry ^{[2
]}

Kohl, Andreas ^{[2
]}

Ousten, Yves ^{[1
]}

Volluet, Gerard ^{[2
]}

机构：

[1] Univ Bordeaux 1, Dept COFI, IMS Labs, 351 Cours Liberat, F-33405 Talence, France

[2] Quantel Laser Diodes, F-91941 Les Ulis, France

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VIII | 2010年 / 7583卷

关键词：

laser diode array; laser diode bars; individual emitter characterization; degree of polarization; degradation analysis;

D O I：

10.1117/12.840671

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Degradation analysis of 808nm QCW laser diode array for space application has been investigated by using individual emitter characterization technique. We found that homogeneity of electro-optical characteristics at emitter level along the bar is a relevant parameter to ensure the reliability of the bars. This work is focused on the importance of individual emitter characterization and aging test results analysis up to 4.47 Gshots.

引用

页数：9

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