Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

被引：4
作者：
Bao, SiQin-GaoWa [1 ,2 ,3 ]
Zhu, Jie-Jie [1 ,2 ]
Ma, Xiao-Hua [1 ,2 ]
Hou, Bin [1 ,2 ]
Yang, Ling [1 ,2 ]
Chen, Li-Xiang [1 ,2 ]
Zhu, Qing [1 ,2 ]
Hao, Yue [2 ]
机构：
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
[3] Inner Mongolia Univ Technol, Sch Sci, Hohhot 010051, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 02期
基金：
中国国家自然科学基金;
关键词：
PASSIVATION; PRETREATMENT; INTERFACE; IMPACT; GAN;
D O I：
10.1088/0256-307X/37/2/027301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). A 200 W NH3/N-2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration, which results in a decrease in sheet resistance and an increase in output current by 20-30%. Improved current slump, suppressed gate leakage current, and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment. It is found that NH3/N-2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.
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页数：4
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