A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

被引：11

作者：

Cao, Ye ^{[1
]}

Osman, Tarick

Clarke, Edmund ^{[1
,2
]}

Patil, Pallavi Kisan ^{[2
]}

Ng, Jo Shien ^{[1
]}

Tan, Chee Hing ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S13JD, S Yorkshire, England

[2] Univ Sheffield, EPSRC Natl Epitaxy Facil, Sheffield S37HQ, S Yorkshire, England

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2022年 / 40卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

Absorption; Dark current; Avalanche photodiodes; Temperature dependence; Temperature measurement; Indium phosphide; III-V semiconductor materials; AlGaAsSb; avalanche breakdown; avalanche photodiode (APD); GaAsSb; impact ionization; separate absorption and multiplication avalanche photodiode (SAM-APD); temperature coefficient; LOW EXCESS NOISE; IMPACT IONIZATION; INP; ELECTRON; MULTIPLICATION;

D O I：

10.1109/JLT.2022.3167268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 mu m at room temperature and a responsivity of 0.39 A/W at 1.55 mu m wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.31 +/- 0.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.

引用

页码：4709 / 4713

页数：5

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