Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

被引：9

作者：

Siegert, J ^{[1
]}

Gaarder, A

Marcinkevicius, S

Leon, R

Chaparro, S

Johnson, SR

Sadofyev, Y

Zhang, YH

机构：

[1] Royal Inst Technol, IMIT Opt, Dept Microelect & Informat Technol, KTH Electrum 229, S-16440 Stockholm, Sweden

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 04期

基金：

美国国家航空航天局;

关键词：

quantum dots; dislocations; lateral alignment; time-resolved photoluminescence;

D O I：

10.1016/S1386-9477(03)00232-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-batched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：541 / 546

页数：6

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