Low-temperature and high-performance ZnSnO thin film transistor activated by lightwave irradiation

被引：20

作者：

Zhang, Qian ^{[1
]}

Ruan, Cheng ^{[1
]}

Gong, Hongyu ^{[1
]}

Xia, Guodong ^{[2
]}

Wang, Sumei ^{[1
]}

机构：

[1] Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China

[2] Qilu Univ Technol, Dept Mat & Engn, Shandong Acad Sci, Jinan 250353, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2021年 / 47卷 / 14期

关键词：

Sol-gel processes; Low-temperature; Metal oxides; Thin-film transistor; ELECTRICAL PERFORMANCE; IMPROVEMENT; STABILITY;

D O I：

10.1016/j.ceramint.2021.04.050

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultra-high-resolution and flexible display applications require high-performance oxide thin film transistors (TFTs) fabricated at low temperatures. This study fabricated low-temperature and solution-processed highmobility ZnSnO (ZTO) thin films and TFTs by a lightwave-activation annealing process. The effect of Sn content on the microstructures and electrical properties of lightwave-activated ZTO (LW-ZTO) films and TFTs was investigated. The lightwave-activation process triggered the efficient decomposition of chloride-based precursors and enhanced the performance of ZTO TFTs at a low temperature (230 degrees C). The optimized ZTO TFTs exhibited excellent electrical properties, including a high saturation mobility of 45.1 cm2/Vs and an on-current/off-current ratio of 105-106 at a low operating voltage of 3 V. Furthermore, the LW-ZTO devices demonstrated high operational stability with a small Vth shift of 0.231 V under bias stress for 5400 s. The performance of the ZTO TFTs was attributed to the low-temperature lightwave-activation process, stemming from the synergic effects of light and heat. These promising results highlight the potential applications of low-temperature lightwave-activated oxide transistors in next-generation cost-effective and low-power flexible electronics.

引用

页码：20413 / 20421

页数：9

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