The preparation of flat H-Si(111) surfaces in 40% NH4F revisited

被引：150
|
作者：
Allongue, P
de Villeneuve, CH
Morin, S
Boukherroub, R
Wayner, DDM
机构：
[1] Univ Paris 06, UPR 15 CNRS, F-75005 Paris, France
[2] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
来源：
ELECTROCHIMICA ACTA | 2000年 / 45卷 / 28期
关键词：
flat H-Si(111) surface; etching; mechanism; AFM;
D O I：
10.1016/S0013-4686(00)00610-1
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The reasons why ideally flat H-Si(111) surface call be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：4591 / 4598
页数：8
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