Chemically vapor-deposited silicon carbide films for surface protection

Silicon carbide (SiC) films offer excellent chemical and mechanical properties and are, therefore, well suited for protection against corrosion and abrasion. SiC films in the thickness range from IO nm to 500 nm were chemically vapor-deposited in a hot-wall, low-pressure reactor at temperatures between 800 degrees C and 900 degrees C. As a single precursor, hexamethylendisilacan was used. Film thickness growth is a linear function of process time. The deposition rate versus time exhibits an Arrhenius behaviour with an activation energy of 3.2 eV. The films reveal a good resistance to etching with HF and HF/HNO3 solution. (C) 1998 Elsevier Science S.A.