Surface Selectively Deposited Organic Single-crystal Transistor Arrays with High Device Performance

被引：3

作者：

Li, Yun ^{[1
]}

Liu, Chuan ^{[1
]}

Kumatani, Akichika ^{[1
]}

Darmawan, Peter ^{[1
]}

Minari, Takeo ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy JST, Core Res Evolut Sci & Technol CREST, Kawaguchi, Saitama 3320012, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2012年 / 566卷

关键词：

Surface selectively deposition; organic single crystals; organic field-effect transistor; solvent-vapor annealing; SEMICONDUCTORS; TRANSPORT; STAMPS;

D O I：

10.1080/15421406.2012.703812

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (mu(FET)) up to 3.5 cm(2)/Vs. And mu(FET) is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest mu(FET) is 7.4 cm(2)/Vs.

引用

页码：13 / 17

页数：5

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