Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study

被引：29

作者：

Peng, Wang ^{[1
]}

Jabeen, F. ^{[2
]}

Jusserand, B. ^{[1
]}

Harmand, J. C. ^{[2
]}

Bernard, M. ^{[1
]}

机构：

[1] UPMC, CNRS, UMR7588, Inst Nanosci Paris, F-75005 Paris, France

[2] CNRS, UPR20, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

关键词：

GAN;

D O I：

10.1063/1.3684837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a room temperature Raman resonance at 1.56 eV in GaAs wurtzite nanowires together with the emergence of a strong forbidden longitudinal optical phonon line. We attribute this resonance, absent in zinc blende wires with similar diameters, to an additional excitonic transition due to conduction band folding in agreement with recent theoretical predictions. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684837]

引用

页数：3