Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

被引：4

作者：

Tamm, Aile ^{[1
]}

Kalam, Kristjan ^{[1
]}

Seemen, Helina ^{[1
]}

Kozlova, Jekaterina ^{[1
]}

Kukli, Kaupo ^{[1
,2
]}

Aarik, Jaan ^{[1
]}

Link, Joosep ^{[3
]}

Stern, Raivo ^{[3
]}

Duenas, Salvador ^{[4
]}

Castan, Helena ^{[4
]}

机构：

[1] Univ Tartu, Inst Phys, W Ostwaldi 1, EE-50411 Tartu, Estonia

[2] Univ Helsinki, Dept Chem, POB 55, FI-00014 Helsinki, Finland

[3] NICPB, Akad Tee 23, EE-12618 Tallinn, Estonia

[4] Univ Valladolid, Dept Elect, Paseo Belen 15, E-47011 Valladolid, Spain

来源：

ACS OMEGA | 2017年 / 2卷 / 12期

关键词：

GROWTH;

D O I：

10.1021/acsomega.7b01394

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 degrees C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.

引用

页码：8836 / 8842

页数：7

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