Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices

被引：16

作者：

Hu, Quanli ^{[1
]}

Kang, Tae Su ^{[1
]}

Abbas, Haider ^{[1
]}

Lee, Tae Sung ^{[1
]}

Lee, Nam Joo ^{[1
]}

Park, Mi Ra ^{[1
]}

Yoon, Tae-Sik ^{[2
]}

Kang, Chi Jung ^{[1
]}

机构：

[1] Myongji Univ, Dept Phys, Gyeonggi Do 449728, South Korea

[2] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 449728, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2018年 / 189卷

关键词：

Resistive switching; Manganese oxide; Cerium oxide; Heterostructures; MANGANESE OXIDE; BEHAVIOR;

D O I：

10.1016/j.mee.2017.12.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The resistive switching characteristics of MnO and CeO2 layers with a large resistance ratio (>10(5)) were demonstrated. The Ag/MnO/CeO2/Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO2 layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO2 and CeO2-x. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：28 / 32

页数：5

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