Gas Sensing Properties of ZnO Thin Film/Si Heterojunction to Alcohols

被引:0
|
作者
Zhou, Xiaoyan [1 ]
Ma, Ming [1 ]
Xue, Qingzhong [1 ]
机构
[1] China Univ Petr, Coll Phys Sci & Technol, Dongying 257061, Shandong, Peoples R China
来源
FUNCTIONAL AND ELECTRONIC MATERIALS | 2011年 / 687卷
关键词
Electrical Properties; Thin films; Sensors; Alcohols; SENSOR APPLICATIONS;
D O I
10.4028/www.scientific.net/MSF.687.798
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The polycrystalline zinc oxide (ZnO) film was deposited on p-Si substrate by radio-frequency (RF) magnetron sputtering. The structure and morphology of the ZnO thin films are characterized by X-ray diffraction (XRD), the energy dispersive analysis of X-ray (EDX) and scanning electron microscope (SEM). The gas sensing properties of the ZnO/Si heterojunctions for alcohols with different chain lengths were investigated at room temperature. It is found that the current-voltage (I-V) characteristics of the ZnO/Si heterojunctions are sensitive to isopropanol, ethanol and methanol gas. We discussed a possible gas sensing mechanism of ZnO/Si heterojunction. The sensitivity of the ZnO/Si heterojunctions to the gases decreases from isopropanol to methanol and to ethanol at the same concentration. It can be explained by the volume effect and electron donating effect.
引用
收藏
页码:798 / 802
页数:5
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