Evolution of Ga Droplets into GaSb Quantum Rings

被引：0

作者：

Kunrugsa, Maetee ^{[1
]}

Prongjit, Patchareewan ^{[1
]}

Khoklang, Kamonchanok ^{[1
]}

Panyakeow, Somsak ^{[1
]}

Ratanathammaphan, Somchai ^{[1
]}

机构：

[1] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab,NANOTEC Ctr Excellence, Bangkok, Thailand

来源：

2014 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY (ICONN) | 2014年

关键词：

GaSb; Quantum Rings; Droplet Epitaxy; DOTS; GAAS(100); GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets and then exposed to Sb flux for crystallization. The evolution of Ga droplets into GaSb QRs is discussed and tracked by means of reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM).

引用

页码：35 / 38

页数：4