Ge-profile Design of SiGe Base for High Frequency Performance of SiGe HPT

被引：0
|
作者：
Shen, Xiaoting [1 ]
Hongyun, Xie [1 ]
Liang, Chen [2 ]
Han, Dong [1 ]
Yang, Xiaoxiong [1 ]
Zhang, Wanrong [1 ]
机构：
[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Peoples R China
来源：
SECOND INTERNATIONAL CONFERENCE ON OPTICS AND IMAGE PROCESSING (ICOIP 2022) | 2022年 / 12328卷
基金：
中国国家自然科学基金;
关键词：
Ge-profile; SiGe heterojunction phototransistor; characteristic frequency;
D O I：
10.1117/12.2644356
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Current high speed photon communication system has a big demand for high performance optical detector, especially the high speed silicon-based detector. In this paper, a SiGe heterojunction phototransistor with different Ge-profile in the SiGe base is designed for high optical characteristic frequency. Influences of three types of Ge-distributions (box, triangular, and trapezoidal distribution) and different Ge-content which is in the range of 15%similar to 35% on the frequency performance of SiGe heterojunction phototransistors (HPTs) are analyzed in this paper. A characteristic frequency of 10.52GHz for an 850 nm incident light is achieved by using triangular distribution with 20% Ge-content in the SiGe base.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] High performance oxide on SiGe and the interface
    Chan, SW
    Zhao, L
    Chen, C
    Li, PW
    Yang, E
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 491 - 494
  • [42] A stacked high-Ge-concentration SiGe/Ge multilayer on a novel Ge + SiGe SRB structure for the gate-all-around MOSFETS
    Haoyan Liu
    Yongliang Li
    Xiaohong Cheng
    Chun Li
    Jiayi Zhang
    Jun Luo
    Wenwu Wang
    Tianchun Ye
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 22926 - 22931
  • [43] Effects of Ge profiles on base transit time and base resistance of SiGe HBT's
    Song, J
    Yuan, JS
    Schwierz, F
    Schipanski, D
    ICECS 96 - PROCEEDINGS OF THE THIRD IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS, VOLS 1 AND 2, 1996, : 876 - 879
  • [44] Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices
    Hahn, Konstanze R.
    Cecchi, Stefano
    Colombo, Luciano
    APPLIED PHYSICS LETTERS, 2016, 108 (20)
  • [45] Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility
    Ueno, T
    Irisawa, T
    Shiraki, Y
    Uedono, A
    Tanigawa, S
    THIN SOLID FILMS, 2000, 369 (1-2) : 320 - 323
  • [46] Simulation and analysis of the high frequency performances of SiGe HBT with quantum well base region
    Yang, WM
    Shi, C
    Liu, SJ
    Chen, JX
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 1007 - 1010
  • [47] Germanium profile design options for SiGe LEC HBTs
    Schroter, M
    Tran, H
    Kraus, W
    SOLID-STATE ELECTRONICS, 2004, 48 (07) : 1133 - 1146
  • [48] A NEW GENERATION OF HIGH FREQUENCY SIGE HBTs
    Heinemann, Bernd
    Fox, Alexander
    MICROWAVE JOURNAL, 2011, 54 (09) : 122 - +
  • [49] SiGe:C profile optimization for low noise performance
    Magnee, P. H. C.
    van Dalen, R.
    Mertens, H.
    Vanhoucke, T.
    van Velzen, B.
    Huiskamp, P.
    Brunets, I.
    Donkers, J. J. T. M.
    Klaassen, D. B. M.
    2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 166 - 169
  • [50] Technology Computer-Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces
    Zechner, Christoph
    Zographos, Nikolas
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (17):
12345