Ge-profile Design of SiGe Base for High Frequency Performance of SiGe HPT

被引：0

作者：

Shen, Xiaoting ^{[1
]}

Hongyun, Xie ^{[1
]}

Liang, Chen ^{[2
]}

Han, Dong ^{[1
]}

Yang, Xiaoxiong ^{[1
]}

Zhang, Wanrong ^{[1
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Peoples R China

来源：

SECOND INTERNATIONAL CONFERENCE ON OPTICS AND IMAGE PROCESSING (ICOIP 2022) | 2022年 / 12328卷

基金：

中国国家自然科学基金;

关键词：

Ge-profile; SiGe heterojunction phototransistor; characteristic frequency;

D O I：

10.1117/12.2644356

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Current high speed photon communication system has a big demand for high performance optical detector, especially the high speed silicon-based detector. In this paper, a SiGe heterojunction phototransistor with different Ge-profile in the SiGe base is designed for high optical characteristic frequency. Influences of three types of Ge-distributions (box, triangular, and trapezoidal distribution) and different Ge-content which is in the range of 15%similar to 35% on the frequency performance of SiGe heterojunction phototransistors (HPTs) are analyzed in this paper. A characteristic frequency of 10.52GHz for an 850 nm incident light is achieved by using triangular distribution with 20% Ge-content in the SiGe base.

引用

页数：5

共 50 条

[31] High-frequency SiGe:C HBTs with elevated extrinsic base regions
Rücker, H
Heinemann, B
Barth, R
Knoll, D
Schley, P
Scholz, R
Tillack, B
Winkler, W
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 279 - 282
[32] High performance 0.25 μm p-type Ge/SiGe MODFETs
Univ of Ulm, Ulm, Germany
Electron Lett, 19 (1888-1889):
[33] High performance 0.25μm p-type Ge/SiGe MODFETs
Hock, G
Hackbarth, T
Erben, U
Kohn, E
Konig, U
ELECTRONICS LETTERS, 1998, 34 (19) : 1888 - 1889
[34] Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure
Drichko, I. L.
Diakonov, A. M.
Lebedeva, E. V.
Smirnov, I. Yu.
Mironov, O. A.
Kummer, M.
von Kaenel, H.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)
[35] INFLUENCE OF LOW DOPED EMITTER AND COLLECTOR REGIONS ON HIGH-FREQUENCY PERFORMANCE OF SIGE-BASE HBTS
HEINEMANN, B
HERZEL, F
ZILLMANN, U
SOLID-STATE ELECTRONICS, 1995, 38 (06) : 1183 - 1189
[36] Base doping profile effect in SiGe heterojunction bipolar transistors
Khanduri, GM
Panwar, BS
2004 IEEE International Conference on Semiconductor Electronics, Proceedings, 2004, : 103 - 107
[37] Improvement on Frequency Performance of SOI SiGe HBT
DAI Guang-hao
Semiconductor Photonics and Technology, 2006, (03) : 150 - 152
[38] High Ge content photodetectors on thin SiGe buffers
Bauer, M
Schöllhorn, C
Lyutovich, K
Kasper, E
Jutzi, M
Berroth, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 77 - 83
[39] High performance SiGe:C HBTs using atomic layer base doping
Tillack, B
Yamamoto, Y
Knoll, D
Heinemann, B
Schley, P
Senapati, B
Krüger, D
APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 55 - 58
[40] Profile Design Optimization of SiGe Heterojunction Bipolar Transistors for High Speed Applications
Kashyap, Ankit
Chauhan, R. K.
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2008, 5 (11) : 2238 - 2242

← 1 2 3 4 5 →