Ge-profile Design of SiGe Base for High Frequency Performance of SiGe HPT

被引：0

作者：

Shen, Xiaoting ^{[1
]}

Hongyun, Xie ^{[1
]}

Liang, Chen ^{[2
]}

Han, Dong ^{[1
]}

Yang, Xiaoxiong ^{[1
]}

Zhang, Wanrong ^{[1
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Peoples R China

来源：

SECOND INTERNATIONAL CONFERENCE ON OPTICS AND IMAGE PROCESSING (ICOIP 2022) | 2022年 / 12328卷

基金：

中国国家自然科学基金;

关键词：

Ge-profile; SiGe heterojunction phototransistor; characteristic frequency;

D O I：

10.1117/12.2644356

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Current high speed photon communication system has a big demand for high performance optical detector, especially the high speed silicon-based detector. In this paper, a SiGe heterojunction phototransistor with different Ge-profile in the SiGe base is designed for high optical characteristic frequency. Influences of three types of Ge-distributions (box, triangular, and trapezoidal distribution) and different Ge-content which is in the range of 15%similar to 35% on the frequency performance of SiGe heterojunction phototransistors (HPTs) are analyzed in this paper. A characteristic frequency of 10.52GHz for an 850 nm incident light is achieved by using triangular distribution with 20% Ge-content in the SiGe base.

引用

页数：5

共 50 条

[21] Germanium profile, graduality and base doping level influences in the performance of SiGe EBT
Garcia, Eloy Ramirez
Zerounian, Nicolas
Aniel, Frederic
Aguilar, Mauro A. Enciso
Barbalat, Benoit
Chevalier, Pascal
Chantre, Alain
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 470 - +
[22] DEVICE DESIGN ISSUES FOR A HIGH-PERFORMANCE BIPOLAR TECHNOLOGY WITH SI OR SIGE EPITAXIAL BASE
BURGHARTZ, JN
CRESSLER, JD
JENKINS, KA
SUN, JYC
STORK, JMC
COMFORT, JH
BRUNNER, TA
STANIS, CL
MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 11 - 14
[23] Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
Lee, C. H.
Southwick, R. G., III
Mochizuki, S.
Li, J.
Miao, X.
Wang, M.
Bao, R.
Ok, I.
Ando, T.
Hashemi, P.
Guo, D.
Narayanan, V.
Loubet, N.
Jagannathan, H.
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
[24] Effect of Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit
Kashyap, Ankit
Chauhan, R. K.
MICROELECTRONICS JOURNAL, 2008, 39 (12) : 1770 - 1773
[25] THE INFLUENCE OF MBE-LAYER DESIGN ON THE HIGH-FREQUENCY PERFORMANCE OF SI/SIGE HBTS
GRUHLE, A
KIBBEL, H
KASPER, E
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 435 - 438
[26] Physical mechanism and simulations of base built-in electric field for a SiGe base HBT with linearly graded Ge profile
Kong, Deyi
Wei, Tongli
Li, Yao
Nie, Weidong
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 1999, 19 (03): : 254 - 259
[27] Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy
Cho, MH
Cho, YJ
Lee, MK
Park, SA
Roh, YS
Kim, YK
Jeong, K
Kang, SK
Ko, DH
Shin, HJ
Kwon, KW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1012 - 1016
[28] High frequency SiGe heterostructure devices
Konig, U
Gruhle, A
IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 14 - 23
[29] Ge profile optimization issues for cryogenically operated SiGe HBTs
Joseph, AJ
Cressler, JD
PROCEEDINGS OF THE FOURTH SYMPOSIUM ON LOW TEMPERATURE ELECTRONICS AND HIGH TEMPERATURE SUPERCONDUCTIVITY, 1997, 97 (02): : 232 - 239
[30] SiGe heteroepitaxy for high frequency circuits
Tillack, B
Bolze, D
Fischer, G
Kissinger, G
Knoll, D
Ritter, G
Schley, P
Wolansky, D
RAPID THERMAL AND INTEGRATED PROCESSING VII, 1998, 525 : 379 - 384

← 1 2 3 4 5 →