Ge-profile Design of SiGe Base for High Frequency Performance of SiGe HPT

被引：0
|
作者：
Shen, Xiaoting [1 ]
Hongyun, Xie [1 ]
Liang, Chen [2 ]
Han, Dong [1 ]
Yang, Xiaoxiong [1 ]
Zhang, Wanrong [1 ]
机构：
[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Peoples R China
来源：
SECOND INTERNATIONAL CONFERENCE ON OPTICS AND IMAGE PROCESSING (ICOIP 2022) | 2022年 / 12328卷
基金：
中国国家自然科学基金;
关键词：
Ge-profile; SiGe heterojunction phototransistor; characteristic frequency;
D O I：
10.1117/12.2644356
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Current high speed photon communication system has a big demand for high performance optical detector, especially the high speed silicon-based detector. In this paper, a SiGe heterojunction phototransistor with different Ge-profile in the SiGe base is designed for high optical characteristic frequency. Influences of three types of Ge-distributions (box, triangular, and trapezoidal distribution) and different Ge-content which is in the range of 15%similar to 35% on the frequency performance of SiGe heterojunction phototransistors (HPTs) are analyzed in this paper. A characteristic frequency of 10.52GHz for an 850 nm incident light is achieved by using triangular distribution with 20% Ge-content in the SiGe base.
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页数：5
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