Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor - I. Growth, structure, and chemical characterization

被引：50

作者：

Wijesundara, MBJ ^{[1
]}

Valente, G

Ashurst, WR

Howe, RT

Pisano, AP

Carraro, C

Maboudian, R

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Dept Chem Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[4] Politecn Milan, Dipartimento Chim Ingn Chim Mat G Natta, I-20131 Milan, Italy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 03期

关键词：

D O I：

10.1149/1.1646141

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the deposition of 3C-SiC films on an Si(100) substrate from 1,3-disilabutane precursor molecule utilizing a conventional low-pressure chemical vapor deposition (CVD) system. The chemical, structural, and growth properties of the resulting films are investigated as functions of deposition temperature and flow rates. Based on X-ray photoelectron spectroscopy, the films deposited at temperatures as low as 650degreesC are indeed carbidic. X-ray diffraction analysis indicates the films to be amorphous up to 750degreesC, above which they become polycrystalline. The effect of process parameters on film uniformity is also reported. Highly uniform films are achieved at 800degreesC and lower, essentially independent of the flow rate. (C) 2004 The Electrochemical Society.

引用

页码：C210 / C214

页数：5

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