Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate

被引：12
|
作者：
Nakao, Tatsuro [1 ]
Fujii, Takahiro [1 ]
Sugiyama, Toru [1 ]
Yamamoto, Shota [1 ]
Iida, Daisuke [1 ]
Iwaya, Motoaki [1 ]
Takeuchi, Tetsuya [1 ]
Kamiyama, Satoshi [1 ]
Akasaki, Isamu [1 ,3 ]
Amano, Hiroshi [2 ,3 ]
机构：
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期
关键词：
QUANTUM-WELLS; GAN;
D O I：
10.1143/APEX.4.101001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9V, 4.8 mA/cm(2), and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm(2) at room temperature. (C) 2011 The Japan Society of Applied Physics
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页数：3
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