Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate

被引：12

作者：

Nakao, Tatsuro ^{[1
]}

Fujii, Takahiro ^{[1
]}

Sugiyama, Toru ^{[1
]}

Yamamoto, Shota ^{[1
]}

Iida, Daisuke ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,3
]}

Amano, Hiroshi ^{[2
,3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期

关键词：

QUANTUM-WELLS; GAN;

D O I：

10.1143/APEX.4.101001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9V, 4.8 mA/cm(2), and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm(2) at room temperature. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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