Electrical compensation by Ga vacancies in Ga2O3 thin films

被引：157
作者：
Korhonen, E. [1 ]
Tuomisto, F. [1 ]
Gogova, D. [2 ]
Wagner, G. [2 ]
Baldini, M. [2 ]
Galazka, Z. [2 ]
Schewski, R. [2 ]
Albrecht, M. [2 ]
机构：
[1] Aalto Univ, Dept Appl Phys, Aalto 00076, Finland
[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 24期
基金：
芬兰科学院;
关键词：
BETA-GA2O3; SINGLE-CRYSTALS; GROWTH; LAYERS;
D O I：
10.1063/1.4922814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O-i. (C) 2015 AIP Publishing LLC.
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页数：3
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