Quantum confinement between self-organized Pt nanowires on Ge(001) -: art. no. 116801

被引：95

作者：

Oncel, N ^{[1
]}

van Houselt, A ^{[1
]}

Huijben, J ^{[1
]}

Hallbäck, AS ^{[1
]}

Gurlu, O ^{[1
]}

Zandvliet, HJW ^{[1
]}

Poelsema, B ^{[1
]}

机构：

[1] Univ Twente, MESA Res Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.95.116801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The existence of one-dimensional (1D) electronic states between self-organized Pt nanowires spaced 1.6 or 2.4 nm apart on a Ge(001) surface is revealed by low-temperature scanning tunneling microscopy. These perfectly straight Pt nanowires act as barriers for a surface state (located just below the Fermi level) of the underlying terrace. The energy positions of the 1D electronic states are in good agreement with the energy levels of a quantum particle in a well. Spatial maps of the differential conductivity of the 1D electronic states conclusively reveal that these states are exclusively present in the troughs between the Pt nanowires.

引用

页数：4

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[31] Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots -: art. no. 257402 [J].

Seguin, R ;

Schliwa, A ;

Rodt, S ;

Pötschke, K ;

Pohl, UW ;

Bimberg, D .

PHYSICAL REVIEW LETTERS, 2005, 95 (25)

[32] Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots -: art. no. 205329 [J].

Péronne, E ;

Fossard, F ;

Julien, FH ;

Brault, J ;

Gendry, M ;

Salem, B ;

Bremond, G ;

Alexandrou, A .

PHYSICAL REVIEW B, 2003, 67 (20)

[33] In situ RHEED control of self-organized Ge quantum dots [J].

Nikiforov, AI ;

Cherepanov, VA ;

Pchelyakov, OP ;

Dvurechenskii, AV ;

Yakimov, AI .

THIN SOLID FILMS, 2000, 380 (1-2) :158-163

[34] Self-organized Ge quantum dots and its photoluminescence properties [J].

朱海军 ;

蒋最敏 ;

徐阿妹 ;

毛明春 ;

胡冬枝 ;

刘晓晗 ;

黄大鸣 ;

陆昉 ;

胡长武 ;

粕谷厚生 .

ProgressinNaturalScience, 1998, (01) :3-5

[35] UHV/CVD self-organized growth of Ge quantum dots [J].

Huang, WT ;

Luo, GL ;

Shi, J ;

Li, C ;

Chen, PY ;

Tsien, PH .

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, :1406-1407

[36] Self-organized Ge quantum dots and its photoluminescence properties [J].

Zhu, HJ ;

Jiang, ZM ;

Xu, AM ;

Mao, MC ;

Hu, DZ ;

Liu, XH ;

Huang, DM ;

Lu, F ;

Hu, CW ;

Kasuya, AS .

PROGRESS IN NATURAL SCIENCE, 1998, 8 (01) :113-116

[37] New optical properties of Ge self-organized quantum dots [J].

Peng, CS ;

Huang, Q ;

Zhang, YH ;

Cheng, WQ ;

Sheng, TT ;

Tung, CH ;

Zhou, JM .

THIN SOLID FILMS, 1998, 323 (1-2) :174-177

[38] Study of phonons in self-organized multiple Ge quantum dots [J].

Liu, JL ;

Jin, G ;

Tang, YS ;

Luo, YH ;

Lu, Y ;

Wang, KL ;

Yu, DP .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) :554-556

[39] Self-organized Ge quantum wires on Si(111) substrates [J].

Jin, G ;

Tang, YS ;

Liu, JL ;

Wang, KL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04) :1406-1409

[40] Study of phonons in self-organized multiple Ge quantum dots [J].

J. L. Liu ;

G. Jin ;

Y. S. Tang ;

Y. H. Luo ;

Y. Lu ;

K. L. Wang ;

D. P. Yu .

Journal of Electronic Materials, 2000, 29 :554-556

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