Hollow silicon carbide nanoparticles from a non-thermal plasma process

被引:42
作者
Coleman, Devin [1 ]
Lopez, Thomas [2 ]
Yasar-Inceoglu, Ozgul [2 ]
Mangolini, Lorenzo [1 ,2 ]
机构
[1] Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; AMORPHOUS-SILICON; CATALYST SUPPORT; RAMAN-SPECTRA; CARBON; POWDER; NANOCRYSTALS; DIFFUSION;
D O I
10.1063/1.4919918
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the synthesis of hollow silicon carbide nanoparticles via a two-step process involving the non-thermal plasma synthesis of silicon nanoparticles, followed by their in-flight carbonization, also initiated by a non-thermal plasma. Simple geometric considerations associated with the expansion of the silicon lattice upon carbonization, in combination of the spherical geometry of the system, explain the formation of hollow nanostructures. This is in contrast with previous reports that justify the formation of hollow particles by means of out-diffusion of the core element, i.e., by the Kirkendall nanoscale effect. A theoretical analysis of the diffusion kinetics indicates that interaction with the ionized gas induces significant nanoparticle heating, allowing for the fast transport of carbon into the silicon particle and for the subsequent nucleation of the beta-silicon carbide phase. This work confirms the potential of non-thermal plasma processes for the synthesis of nanostructures composed of high-melting point materials, and suggests that such processes can be tuned to achieve morphological control. (C) 2015 AIP Publishing LLC.
引用
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页数:7
相关论文
共 43 条
[1]  
Birnie D. P., 1986, J AM CERAM SOC, V10, P69
[2]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[3]   Single-Step Plasma Synthesis of Carbon-Coated Silicon Nanoparticles [J].
Chaukulkar, Rohan P. ;
de Peuter, Koen ;
Stradins, Paul ;
Pylypenko, Svitlana ;
Bell, Jacob P. ;
Yang, Yongan ;
Agarwal, Sumit .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (21) :19026-19034
[4]  
Edmond J, 1997, PHYS STATUS SOLIDI A, V162, P481, DOI 10.1002/1521-396X(199707)162:1<481::AID-PSSA481>3.0.CO
[5]  
2-O
[6]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[7]   Interpretation of Raman spectra of disordered and amorphous carbon [J].
Ferrari, AC ;
Robertson, J .
PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107
[8]   Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon [J].
Ferrari, AC ;
Robertson, J .
PHYSICAL REVIEW B, 2001, 64 (07)
[9]   Synthesis and oxidation of luminescent silicon nanocrystals from silicon tetrachloride by very high frequency nonthermal plasma [J].
Gresback, Ryan ;
Nozaki, Tomohiro ;
Okazaki, Ken .
NANOTECHNOLOGY, 2011, 22 (30)
[10]   SILICON-CARBIDE BLUE-LIGHT EMITTING DIODES WITH IMPROVED EXTERNAL QUANTUM EFFICIENCY [J].
HOFFMANN, L ;
ZIEGLER, G ;
THEIS, D ;
WEYRICH, C .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6962-6967