Epitaxial growth of thin films and nanodots of ZnO on Si(111) by pulsed laser deposition

被引：24

作者：

Lee, Sung Kyun ^{[1
]}

Son, Jong Yeog ^{[2
]}

机构：

[1] MagnaChip Semicond, Failure Anal Team, CE Specialty Proc Dev, Cheongju 361728, South Korea

[2] Kyung Hee Univ, Dept Appl Phys, Coll Appl Sci, Suwon 446701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 13期

关键词：

YTTRIA-STABILIZED ZIRCONIA; BUFFER LAYER; ZINC-OXIDE; SI; PHOTOLUMINESCENCE;

D O I：

10.1063/1.3698470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial (0001) ZnO thin films were grown on (111) Si substrates buffered with intermediate epitaxial (111) yttria-stabilized zirconia (YSZ) layers by pulsed laser deposition (PLD). X-ray diffraction and transmission electron microscopy characterizations revealed that the YSZ buffer layers enabled the epitaxial growth of structurally high quality ZnO films and an atomically sharp ZnO/YSZ interface, proving to be an effective epitaxial template. The epitaxial orientation relationships were revealed as follows: (0001) ZnO parallel to(111) YSZ parallel to(111) Si and [(1) over bar2 (1) over bar0] ZnO parallel to[(1) over bar 10] YSZ parallel to[(1) over bar 10] Si. Room temperature photoluminescence spectrum of the ZnO films showed the excitonic ultraviolet emission with few green emissions relevant to oxygen vacancies in the film. Furthermore, we fabricated ZnO nanostructures on the same (111) YSZ parallel to(111) Si substrates by simply manipulating PLD conditions for the epitaxial film growth. The size control of the ZnO nanodots was realized by varying the number of laser pulses. A blueshift behavior induced by quantum confinement was observed, as the nanodot size decreases. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698470]

引用

页数：4

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