Rectifying Behavior of Aligned ZnO Nanorods on Mg0.3Zn0.7O Thin Film Template

被引：2

作者：

Salina, Muhamad ^{[1
]}

Suriani, Abu Bakar ^{[2
]}

Mamat, Mohamad Hafiz ^{[1
]}

Ahmad, Rafidah ^{[1
]}

Rusop, Mohamad ^{[1
,2
]}

机构：

[1] Univ Teknol MARA, NANO ElecTron Ctr, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia

[2] Univ Teknol MARA, NANO SciTech Ctr, Inst Sci, Shah Alam 40450, Selangor, Malaysia

来源：

NANOMATERIALS: SYNTHESIS AND CHARACTERIZATION | 2012年 / 364卷

关键词：

Rectifying; ZnO nanorods; MgZnO; Barrier height;

D O I：

10.4028/www.scientific.net/AMR.364.35

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nanorods grown on Mg0.3Zn0.7O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crytallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nanorods was discussed in further details.

引用

页码：35 / +

页数：2

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