Helicity sensitive terahertz radiation detection by field effect transistors

被引：63

作者：

Drexler, C. ^{[1
]}

Dyakonova, N. ^{[2
]}

Olbrich, P. ^{[1
]}

Karch, J. ^{[1
]}

Schafberger, M. ^{[1
]}

Karpierz, K. ^{[3
]}

Mityagin, Yu ^{[4
]}

Lifshits, M. B. ^{[2
,5
]}

Teppe, F. ^{[2
]}

Klimenko, O. ^{[2
]}

Meziani, Y. M. ^{[6
]}

Knap, W. ^{[2
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] Univ Montpellier 2, Lab Charles Coulomb, CNRS, UM2,UMR 5221, F-34095 Montpellier 5, France

[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[4] PN Lebedev Phys Inst, Moscow 119991, Russia

[5] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[6] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

关键词：

RESONANT DETECTION; DEEP IMPURITIES; PLASMA-WAVES; PHOTON-DRAG; PHOTOCONDUCTIVITY; SEMICONDUCTORS; SUBTERAHERTZ;

D O I：

10.1063/1.4729043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also, linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature, and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729043]

引用

页数：6

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