Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

被引：12

作者：

Gonzalez-Velo, Yago ^{[1
,2
]}

Boch, Jerome ^{[1
,2
]}

Saigne, Frederic ^{[1
,2
]}

Roche, Nicolas J. -H. ^{[1
,2
]}

Perez, Stephanie ^{[1
]}

Vaille, Jean-Roch ^{[2
,3
]}

Deneau, Christelle ^{[1
]}

Dusseau, Laurent

Lorfevre, Eric ^{[4
]}

Schrimpf, Ronald D. ^{[5
]}

Chatry, Christian ^{[6
]}

Legoulven, Enoal ^{[6
]}

Platteter, Dale G. ^{[7
]}

机构：

[1] Univ Montpellier 2, F-34095 Montpellier 5, France

[2] CNRS, IES, UMR 5214, UM2, F-34095 Montpellier 5, France

[3] IES, UMR 5214, F-30021 Nimes 01, France

[4] Ctr Natl dEtudes Spati, F-314019 Toulouse 9, France

[5] Vanderbilt Univ, Nashville, TN 37235 USA

[6] Test & Radiat TRAD, F-31674 Labege, France

[7] Platteter Enterprises, Bedford, IN 47421 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Bipolar devices; ELDRS; interface trapped charge; oxide trapped charge; total dose; RADIATION-INDUCED DEGRADATION; INTERFACE-TRAP FORMATION; RATE SENSITIVITY; MOLECULAR-HYDROGEN; GAIN DEGRADATION; PHYSICAL MODEL; BIPOLAR;

D O I：

10.1109/TNS.2011.2170707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N-ot and N-it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.

引用

页码：2953 / 2960

页数：8

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