Selective epitaxy growth of Si1-xGex layers for MOSFETs and FinFETs

被引：35
作者：
Radamson, Henry H. [1 ]
Kolahdouz, Mohammadreza [2 ]
机构：
[1] Royal Inst Technol KTH, Sch Informat & Commun Technol, S-16640 Kista, Sweden
[2] Univ Tehran, Elect & Comp Engn Dept, Thin Film Lab, Tehran, Iran
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 07期
关键词：
CHEMICAL-VAPOR-DEPOSITION; DOPED SIGE; REDUCED-PRESSURE; FACET EVOLUTION; HOLE MOBILITY; KINETIC-MODEL; SURFACE; TRANSPORT; BORON; GE;
D O I：
10.1007/s10854-015-3123-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.
引用
收藏
页码：4584 / 4603
页数：20
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