Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes

被引：0
作者：
Ryzhii, M [1 ]
Willander, M [1 ]
Khmyrova, I [1 ]
Ryzhii, V [1 ]
机构：
[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
来源：
SECOND INTERNATIONAL WORKSHOP ON PHYSICS AND MODELING OF DEVICES BASED ON LOW-DIMENSIONAL STRUCTURES, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/LDS.1998.714533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the the calculated transient photocurrent is used to obtain the frequency dependent responsivity. Ir is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.
引用
收藏
页码：46 / 53
页数：8
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