Study of the mechanism of multi-channel discharge in semiconductor processing by WEDM

被引：23

作者：

Chen, Hao-ran ^{[1
]}

Liu, Zhi-dong ^{[1
]}

Huang, Sai-juan ^{[1
]}

Pan, Hui-jun ^{[1
]}

Qiu, Ming-bo ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mech & Elect Engn, Nanjing 210016, Jiangsu, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 32卷

基金：

中国国家自然科学基金;

关键词：

Semiconductor; WEDM; Multi-discharge channels; Processing efficiency;

D O I：

10.1016/j.mssp.2014.12.061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper studies the discharge characteristics of metal and semiconductor processing by WEDM, proves single-channel discharge in metal EDM and finds multi-channel discharge phenomenon in semiconductor EDM. The mechanism has been analyzed in this paper. The main reason for multi-channel discharge is the existence of body resistor and contact barrier; thus, there still exists a high potential difference between the electrode wire and the surrounding area of discharge points after the dielectric breakdown, and this potential difference can form a second discharge. The effects of multi-channel discharge on the processing efficiency of semiconductor EDM are also studied. The energy of each discharge channel is roughly equal, and thus the multi-channel discharge at the same time can increase the energy utilization ratio of the pulsed power supply and improve the processing efficiency. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：125 / 130

页数：6

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