Effect of ambient on the resistance fluctuations of graphene

被引：25

作者：

Amin, Kazi Rafsanjani ^{[1
]}

Bid, Aveek ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 18期

关键词：

1/F NOISE; CHEMICAL SENSORS; GAS SENSORS; TRANSISTOR; MOLECULES; SPECTRA; DEVICES; FILMS;

D O I：

10.1063/1.4919793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors. The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity, and fast response times. (c) 2015 AIP Publishing LLC.

引用

页数：5

共 30 条

[1]

Amin KR, 2014, CURR SCI INDIA, V107, P430

[2]

Balandin AA, 2013, NAT NANOTECHNOL, V8, P549, DOI [10.1038/NNANO.2013.144, 10.1038/nnano.2013.144]

[3] Low-frequency random telegraphic noise and 1/f noise in the rare-earth manganite Pr0.63Ca0.37MnO3 near the charge-ordering transition -: art. no. 174415 [J].