Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

被引：74

作者：

Brahlek, Matthew ^{[1
]}

Kim, Yong Seung ^{[2
]}

Bansal, Namrata ^{[3
]}

Edrey, Eliav ^{[1
]}

Oh, Seongshik ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[3] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期

基金：

美国国家科学基金会;

关键词：

TRANSPORT;

D O I：

10.1063/1.3607484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs, it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi2Se3 thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607484]

引用

页数：3

共 20 条

[1]

Aguilar R V, 2011, ARXIV11050237

[2]

Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]

[3] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[4]

Ashcroft N., 2011, Solid State Physics

[5]

BANSAL N, 2011, ARXIV11043438

[6]

Bansal N., 2011, ARXIV11045709

[7] Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3 [J].

Bianchi, Marco ;

Guan, Dandan ;

Bao, Shining ;

Mi, Jianli ;

Iversen, Bo Brummerstedt ;

King, Philip D. C. ;

Hofmann, Philip .

NATURE COMMUNICATIONS, 2010, 1

[8] Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator [J].

Chen, Y. L. ;

Chu, J. -H. ;

Analytis, J. G. ;

Liu, Z. K. ;

Igarashi, K. ;

Kuo, H. -H. ;

Qi, X. L. ;

Mo, S. K. ;

Moore, R. G. ;

Lu, D. H. ;

Hashimoto, M. ;

Sasagawa, T. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. X. .

SCIENCE, 2010, 329 (5992) :659-662

[9] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[10] p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications [J].

Hor, Y. S. ;

Richardella, A. ;

Roushan, P. ;

Xia, Y. ;

Checkelsky, J. G. ;

Yazdani, A. ;

Hasan, M. Z. ;

Ong, N. P. ;

Cava, R. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

← 1 2 →