High-speed silicon optical modulator based on a PIPIN diode

被引:1
作者
Ziebel, Melissa [1 ]
Marris-Morini, Delphine [1 ]
Rasigade, Gilles [1 ]
Fedeli, Jean-Marc [2 ]
Cassan, Eric [1 ]
Duan, Guang-Hua [3 ]
Vivien, Laurent [1 ]
机构
[1] Univ Paris Sud XI, Inst Elect Fondamentale, Batiment 220, F-91405 Orsay, France
[2] CEA, LETI, F-38054 Grenoble, France
[3] III V Lab, F-91767 Palaiseau, France
来源
SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III | 2012年 / 8431卷
关键词
Optical modulation; silicon modulator; carrier depletion; silicon photonics; Mach Zehnder interferometer; HIGH-EXTINCTION-RATIO; LOW-VOLTAGE; COMPACT;
D O I
10.1117/12.922933
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the experimental results of an error-free high-speed silicon optical modulator based on carrier depletion in a lateral 1.8 mm-long PIPIN diode embedded in a Mach-Zehnder interferometer. At 10 Gbit/s, the silicon optical modulator provides a large extinction ratio of 8.1 dB simultaneously with a low optical loss of 6 dB. The silicon modulator is a key element required to build and integrate photonic high performance data links.
引用
收藏
页数:6
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