I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

被引：12

作者：

Ivanov, P. A. ^{[1
]}

Grekhov, I. V. ^{[1
]}

Kon'kov, O. I. ^{[1
]}

Potapov, A. S. ^{[1
]}

Samsonova, T. P. ^{[1
]}

Semenov, T. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 10期

关键词：

Barrier Height; Versus Characteristic; Schottky Barrier; Space Charge Region; Schottky Diode;

D O I：

10.1134/S1063782611100095

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The I-V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier similar to 1.1 eV in height are measured and analyzed. The forward I-V characteristics proved to be close to "ideal" in the temperature range of 295-470 K. The reverse I-V characteristics are adequately described by the model of thermionic emission at the voltages to 2 kV in the temperature range of 361-470 K if, additionally, a barrier lowering with an increase in the band bending in the semiconductor is taken into account.

引用

页码：1374 / 1377

页数：4

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