Etching of 42 nm and 32 nm half-pitch features patterned using Step and Flash® Imprint Lithography

In this work, the authors demonstrate the suitability of Step and Flash(R) Imprint Lithography (S-FIL(R)) materials as a mask for patterning 42 nm and 32 nm half pitch features into a hardmask material. We present a zero etch-bias process with good silicon oxide to imprint resist selectivity and excellent line-width roughness (LWR) control. We demonstrate the required etch processes and mean value and uniformity of the residual layer thickness (RLT) necessary to maintain cross wafer CD uniformity for 42 nm and 32 nm half pitch dense lines. Finally, the authors present a mechanism for targeting the critical dimension by control of the imprint resist volume.