Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction

被引：63

作者：

Baer, M. ^{[1
,2
,3
]}

Schubert, B. -A. ^{[1
]}

Marsen, B. ^{[1
]}

Wilks, R. G. ^{[1
]}

Pookpanratana, S. ^{[2
]}

Blum, M. ^{[2
,4
]}

Krause, S. ^{[2
]}

Unold, T. ^{[1
]}

Yang, W. ^{[4
]}

Weinhardt, L. ^{[5
,6
]}

Heske, C. ^{[2
,6
]}

Schock, H. -W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH HZB, D-14109 Berlin, Germany

[2] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[3] Brandenburg Tech Univ Cottbus, Inst Phys & Chem, D-03046 Cottbus, Germany

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[5] Univ Wurzburg, D-97074 Wurzburg, Germany

[6] Karlsruhe Inst Technol, Inst Synchrotron Radiat, D-76344 Eggenstein Leopoldshafen, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

cadmium compounds; carrier mobility; copper compounds; electron-hole recombination; etching; photoemission; semiconductor heterojunctions; semiconductor thin films; solar cells; tin compounds; zinc compounds; CU2ZNSNS4;

D O I：

10.1063/1.3663327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a "cliff"-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663327]

引用

页数：3

共 23 条

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