An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation

被引：0

作者：

Manuel Lopez-Martinez, Juan ^{[1
]}

Vornicu, Ion ^{[1
]}

Carmona-Galan, Ricardo ^{[1
]}

Rodriguez-Vazquez, Angel ^{[1
]}

机构：

[1] Univ Seville, CSIC, Inst Microelect Sevilla, CNM, Seville, Spain

来源：

2018 25TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2018年

关键词：

CMOS; Verilog-A; TCAD simulation; single-photon avalanche diode (SPAD); device simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is first model to incorporate a trap-assisted tunneling mechanism, a cross-section temperature dependence of the traps, and the self-heating effect. Comparison with experimental data establishes the validity of the model.

引用

页码：137 / 140

页数：4

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