Investigation of single-event transients in voltage-controlled oscillators

被引：43

作者：

Chen, WJ ^{[1
]}

Pouget, V

Barnaby, HJ

Cressler, JD

Niu, GF

Fouillat, P

Deval, Y

Lewis, D

机构：

[1] Univ Arizona, Tucson, AZ 85721 USA

[2] Univ Bordeaux 1, IXL Lab, F-33405 Talence, France

[3] Georgia Inst Technol, Atlanta, GA 30332 USA

[4] Auburn Univ, Auburn, AL 36849 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期

关键词：

radio frequency; spectrum analyzer; SiGe heterojunction bipolar transistor; single-event transients (SETS); voltage-controlled oscillators;

D O I：

10.1109/TNS.2003.820766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that-ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.

引用

页码：2081 / 2087

页数：7

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