LPCVD ZnO-based intermediate reflector for micromorph tandem solar cells

被引：23

作者：

Bugnon, G. ^{[1
]}

Soederstroem, T. ^{[2
]}

Nicolay, S. ^{[1
]}

Ding, L. ^{[1
]}

Despeisse, M. ^{[1
]}

Hedler, A. ^{[3
]}

Eberhardt, J. ^{[3
]}

Wachtendorf, C. ^{[3
]}

Ballif, C. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[3] Bosch Solar Thin Film GmbH, D-99098 Erfurt, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 08期

关键词：

Thin film solar cell; Micromorph; ZnO; ZIR; Intermediate reflector; IRL;

D O I：

10.1016/j.solmat.2011.03.018

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The use of zinc oxide (ZnO) based intermediate reflector (ZIR) in micromorph solar cells using low pressure chemical vapor deposition (LPCVD) was investigated. The influences of deposition temperature and dopant gas concentration on grain size and lateral electrical conductivity measurements are presented. Further ZIR deposition conditions were then directly evaluated in micromorph solar cell devices. Their electrical performances were compared to reference cells and cells incorporating silicon oxide based intermediate reflector. It is shown that both reduced ZIR deposition temperature and increased total flow rate allow for better performing devices with increased shunt resistance, as further supported by lock-in thermography shunt imaging. Relative micromorph efficiency increase of above 7% is shown with thin ZnO layers, along with absence of loss or even small increase of total current in the whole structure compared to cells without intermediate reflector. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2161 / 2166

页数：6

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