Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

被引:29
作者
Donoval, D. [1 ]
Chvala, A. [1 ]
Sramaty, R. [1 ]
Kovac, J. [1 ]
Morvan, E. [2 ]
Dua, Ch. [2 ]
DiForte-Poisson, M. A. [2 ]
Kordos, P. [1 ,3 ]
机构
[1] Slovak Tech Univ Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France
[3] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
关键词
GAN; CONTACTS;
D O I
10.1063/1.3560919
中图分类号
O59 [应用物理学];
学科分类号
摘要
The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-820 K. The experimental data were analyzed considering different current-transport mechanisms, such as thermionic emission, generation-recombination, tunneling and leakage currents. From the fitting of experimental data it follows that the tunneling current dominates in whole temperature range. The thermionic emission becomes comparable to the tunneling current only at highest temperatures used. The barrier height of the Ni/InAlN/GaN Schottky diodes, evaluated from the thermionic emission current, shows a slightly negative temperature coefficient and its value at 300 K is 1.47 eV. Lower barrier heights were reported before, which follow from an incorrect evaluation of measured data without separation of individual current components. The dislocation density of about 2 x 10(9) cm(-2) is obtained assuming dislocation governed tunneling current mechanism. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3560919]
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页数:5
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