Modifying the Magnetic and Electronic Properties of Monolayer 2H-VS2 via Ferroelectric Substrate with Different Surface Terminations

被引:1
作者
Dai, Jian-Qing [1 ]
Liu, Yu-Zhu [1 ]
Yuan, Jin [1 ]
机构
[1] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2022年 / 259卷 / 11期
基金
中国国家自然科学基金;
关键词
2H-VS2; BiFeO3(0001); electronic structure; first-principles calculations; interface coupling; magnetic properties; 2-DIMENSIONAL MATERIALS; VALLEY POLARIZATION; HYBRID STRUCTURES; DENSITY; DRIVEN; FERROMAGNETISM; INTEGRATION; STABILITY; STATE; MOS2;
D O I
10.1002/pssb.202200087
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A promising strategy to tailor the magnetic and electronic properties of 2D van der Waals magnets is to integrate them with a ferroelectric (FE) substrate. Herein, the FE substrate effect of BiFeO3(0001) with different surface terminations is explored using density functional theory calculations for the ferromagnetic 2H-VS2 monolayer. It is observed that depending on the polarization direction and surface termination of the BiFeO3(0001) FE substrate, the 2H-VS2/BiFeO3(0001) interface exhibits a substantially varied charge transfer behavior. The magnetic and electronic properties of the monolayer 2H-VS2 are significantly modulated by the interface charge transfer. Furthermore, in the 2H-VS2/BiFeO3(0001) heterostructures, large interface magnetoelectric coupling coefficients are predicted. The in-plane magnetic and electronic properties of monolayer 2H-VS2 can be effectively tuned by the out-of-plane FE polarization, paving the way for a novel class of spintronic devices based on the 2H-VS2/BiFeO3(0001) hybrid system.
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页数:10
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共 73 条
[51]   Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor [J].
Michailow, Wladislaw ;
Schuelein, Florian J. R. ;
Moeller, Benjamin ;
Preciado, Edwin ;
Nguyen, Ariana E. ;
von Son, Gretel ;
Mann, John ;
Hoerner, Andreas L. ;
Wixforth, Achim ;
Bartels, Ludwig ;
Krenner, Hubert J. .
APPLIED PHYSICS LETTERS, 2017, 110 (02)
[52]  
Neamen D.A., 1992, SEMICONDUCTOR PHYS D
[53]   Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit [J].
O'Hara, Dante J. ;
Zhu, Tiancong ;
Trout, Amanda H. ;
Ahmed, Adam S. ;
Luo, Yunqiu Kelly ;
Lee, Choong Hee ;
Brenner, Mark R. ;
Rajan, Siddharth ;
Gupta, Jay A. ;
McComb, David W. ;
Kawakami, Roland K. .
NANO LETTERS, 2018, 18 (05) :3125-3131
[54]   Investigation of the spectral properties and magnetism of BiFeO3 by dynamical mean-field theory [J].
Paul, Souvik ;
Iusan, Diana ;
Thunstrom, Patrik ;
Kvashnin, Yaroslav O. ;
Hellsvik, Johan ;
Pereiro, Manuel ;
Delin, Anna ;
Knut, Ronny ;
Phuyal, Dibya ;
Lindblad, Andreas ;
Karis, Olof ;
Sanyal, Biplab ;
Eriksson, Olle .
PHYSICAL REVIEW B, 2018, 97 (12)
[55]   Electronic phenomena at complex oxide interfaces: insights from first principles [J].
Pentcheva, Rossitza ;
Pickett, Andwarren E. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (04)
[56]   Restoring the density-gradient expansion for exchange in solids and surfaces [J].
Perdew, John P. ;
Ruzsinszky, Adrienn ;
Csonka, Gabor I. ;
Vydrov, Oleg A. ;
Scuseria, Gustavo E. ;
Constantin, Lucian A. ;
Zhou, Xiaolan ;
Burke, Kieron .
PHYSICAL REVIEW LETTERS, 2008, 100 (13)
[57]   The electronic structure and spin states of 2D graphene/VX2 (X = S, Se) heterostructures [J].
Popov, Z. I. ;
Mikhaleva, N. S. ;
Visotin, M. A. ;
Kuzubov, A. A. ;
Entani, S. ;
Naramoto, H. ;
Sakai, S. ;
Sorokin, P. B. ;
Avramov, P. V. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (48) :33047-33052
[58]   Magnetism in two-dimensional materials beyond graphene [J].
Sethulakshmi, N. ;
Mishra, Avanish ;
Ajayan, P. M. ;
Kawazoe, Yoshiyuki ;
Roy, Ajit K. ;
Singh, Abhishek K. ;
Tiwary, Chandra Sekhar .
MATERIALS TODAY, 2019, 27 (107-122) :107-122
[59]   Spin orientation and strain tuning valley polarization with magneto-optic Kerr effects in ferrovalley VS2 monolayer [J].
Shen, Chenhai ;
Wang, Guangtao ;
Wang, Tianxing ;
Xia, Congxin ;
Li, Jingbo .
APPLIED PHYSICS LETTERS, 2020, 117 (04)
[60]   Four logic states of tunneling magnetoelectroresistance in ferromagnetic shape memory alloy based multiferroic tunnel junctions [J].
Singh, Kirandeep ;
Kaur, Davinder .
APPLIED PHYSICS LETTERS, 2017, 111 (02)