Temperature dependence of the band gap of FeIn2S4 single crystals

被引：12

作者：

Bodnar, I. V. ^{[1
]}

Pavlukovets, S. A. ^{[1
]}

机构：

[1] Belarussian State Univ Informat & Radio Elect, Minsk 220013, BELARUS

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 11期

关键词：

GROWTH;

D O I：

10.1134/S1063782611110078

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single crystals of the FeIn2S4 ternary compound are grown by the Bridgman method. The composition and structure of the crystals are established. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied in the temperature range of T = 20-300 K. The band gap E (g) and its temperature dependence E (g) (T) are determined from the transmittance spectra. It is shown that the shape of the dependence E (g) (T) is typical of complex compounds.

引用

页码：1395 / 1398

页数：4

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