Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates

被引：31
作者：
Tamulaitis, G
Yilmaz, I
Shur, MS
Anderson, T
Gaska, R
机构：
[1] Rensselaer Polytech Inst, Dept ECE & CIE, Troy, NY 12180 USA
[2] IIVI Inc, Pine Brook, NJ 07058 USA
[3] Sensor Elect Technol Inc, Columbia, SC 29209 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期
关键词：
D O I：
10.1063/1.1641172
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conductive undoped and semi-insulating vanadium-doped 6H-SiC substrates were studied using the light-induced transient grating technique and photoluminescence (PL) spectroscopy. Carrier lifetime of 400+/-10 ps and diffusion coefficient of 2.7+/-0.2 cm(2) s(-1) were obtained for the nominally undoped wafer, while the corresponding parameters for the V-doped wafer were estimated to be 130+/-5 ps and 0.9+/-0.5 cm(2) s(-1), respectively. The peak PL intensity in the vanadium-doped wafers is more than three orders of magnitude lower than that in nominally undoped wafers. Low-temperature cw PL spectra revealed a band peaked at 507 nm, which is caused by V doping. (C) 2004 American Institute of Physics.
引用
收藏
页码：335 / 337
页数：3
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