Low-threshold 833-nm GaAsP-AlGaAs tensile-strained quantum-well laser diodes

被引：9

作者：

Sun, D

Treat, DW

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 01期

关键词：

D O I：

10.1109/68.475762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the demonstration of TM polarized laser emission at 833 nm from GaAsP-AlGaAs quantum well laser structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy for the first time. This is the logest wavelength near infrared TM polarized laser ever reported. Broad area laser diodes containing single GaAs0.95 P-0.05 A/cm(2) for a cavity length of 1 mm and with a high differential quantum efficiency of 32%/facet for cavity length less than 500 mu m.

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页码：13 / 15

页数：3

相关论文

共 7 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] HIGH-PERFORMANCE 770-NM ALGAAS-GAASP TENSILE-STRAINED QUANTUM-WELL LASER-DIODES [J].

AGAHI, F ;

LAU, KM ;

CHOI, HK ;

BALIGA, A ;

ANDERSON, NG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) :140-143

[3] TENSILE-STRAINED ALGAASP- AND INGAASP-(ALGA)0.5IN0.5P QUANTUM-WELL LASER-DIODES FOR TM-MODE EMISSION IN THE WAVELENGTH RANGE 650-LESS-THAN-LAMBDA-LESS-THAN-850-NM [J].

BOUR, DP ;

TREAT, DW ;

BEERNINK, KJ ;

THORNTON, RL ;

PAOLI, TL ;

BRINGANS, RD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) :1283-1285

[4] DUAL-POLARIZATION, SINGLE-QUANTUM-WELL ALGAINP LASER-DIODE STRUCTURE [J].

BOUR, DP ;

BEERNINK, KJ ;

TREAT, DW ;

PAOLI, TL ;

THORNTON, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (12) :2738-2742

[5] EFFICIENT BAND-STRUCTURE CALCULATIONS OF STRAINED QUANTUM-WELLS [J].

CHUANG, SL .

PHYSICAL REVIEW B, 1991, 43 (12) :9649-9661

[6] HIGHLY EFFICIENT TE/TM MODE SWITCHING OF GAASP/ALGAAS STRAINED-QUANTUM-WELL LASER-DIODES [J].

TANAKA, H ;

SHIMADA, J ;

SUZUKI, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :158-160

[7] STRAINED-LAYER GAAS(1-Y)P(Y)-ALGAAS AND IN(X)GA(1-X)AS-ALGAAS QUANTUM-WELL DIODE-LASERS [J].

VANDERPOEL, CJ ;

AMBROSIUS, HPMM ;

LINDERS, RWM ;

PEETERS, RML ;

ACKET, GA ;

KRIJN, MPCM .

APPLIED PHYSICS LETTERS, 1993, 63 (17) :2312-2314