Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition

被引：37
作者：
Fujiwara, H
Danno, K
Kimoto, T
Tojo, T
Matsunami, H
机构：
[1] Dept Tech & Dev, Kagawa 7691612, Japan
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期
关键词：
doping; chemical vapor deposition; vapor phase epitaxy; semiconducting silicon compounds;
D O I：
10.1016/j.jcrysgro.2005.03.093
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The C/Si ratio dependence of growth rate, surface morphology, micropipe closing ratio, doping concentration and deep-level concentration have been investigated in fast epitaxial growth of 4H-SiC (0 0 0 1) epilayers by chemical vapor deposition in a vertical hot-wall reactor. The doping, Z(1/2) and EH6/7 centers concentrations of thick epilayers decrease with increasing C/Si ratio of source gases. By adjusting the C/Si ratio at 0.7, specular surface morphology with a low doping concentration of 1 x 10(13) cm(-3) has been obtained at a growth rate of 33 mu m/h, and the concentrations Of Z1/2 and EH6/7 centers have been kept low, 8 x 10(12) and 4 x 10(12) cm(-3), respectively. (c) 2005 Elsevier B.V. All rights reserved.
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页码：370 / 376
页数：7
相关论文
共 26 条
  • [1] Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO
  • [2] 2-0
  • [3] Alphabet luminescence lines in 4H-SiC -: art. no. 184108
    Eberlein, TAG
    Fall, CJ
    Jones, R
    Briddon, PR
    Öberg, S
    [J]. PHYSICAL REVIEW B, 2002, 65 (18) : 1841081 - 1841084
  • [4] Properties of the D1 bound exciton in 4H-SiC
    Egilsson, T
    Bergman, JP
    Ivanov, IG
    Henry, A
    Janzén, E
    [J]. PHYSICAL REVIEW B, 1999, 59 (03) : 1956 - 1963
  • [5] Epitaxial growth of SiC in a chimney CVD reactor
    Ellison, A
    Zhang, J
    Henry, A
    Janzén, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 225 - 238
  • [6] Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
    Fujihira, K
    Kimoto, T
    Matsunami, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 255 (1-2) : 136 - 144
  • [7] High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
    Fujihira, K
    Kimoto, T
    Matsunami, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (09) : 1586 - 1588
  • [8] Deep level defects in electron-irradiated 4H SiC epitaxial layers
    Hemmingsson, C
    Son, NT
    Kordina, O
    Bergman, JP
    Janzen, E
    Lindstrom, JL
    Savage, S
    Nordell, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) : 6155 - 6159
  • [9] Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation
    Kamata, I
    Tsuchida, H
    Jikimoto, T
    Izumi, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (10A): : L1012 - L1014
  • [10] Kimoto T, 1997, PHYS STATUS SOLIDI B, V202, P247, DOI 10.1002/1521-3951(199707)202:1<247::AID-PSSB247>3.0.CO
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