Optical properties of an exciton bound to an ionized impurity in ZnO/SiO2 quantum dots

被引:11
作者
Dallali, Lobna [1 ]
Jaziri, Sihem [1 ]
Martinez-Pastor, Juan [2 ]
机构
[1] Fac Sci Bizerte, Dept Phys, Jarzouna 7021, Tunisia
[2] Inst Ciencia Mat Univ Valencia, Valencia 46071, Spain
关键词
ZnO QDs; Acceptor-donor complex exciton; Binding energy; DONOR; PHOTOLUMINESCENCE; FIELD; OXIDE;
D O I
10.1016/j.ssc.2015.02.012
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The energy of the ground and the excited states for the exciton and the binding energy of the acceptor donor exciton complexes (A(-),X) and (D+,X) as a function of the radius for an impurity position located in the center in the spherical ZnO quantum dots (QDs) embedded in a SiO2 matrix are calculated using the effective mass approximation under the diagonalzation matrix technique, including a three-dimensional confinement of carrier in the QD and assuming a unite depth. Numerical results show that the binding energy of the acceptor-donor exciton complexes is very sensitive to the quantum dot size. These results could be particularly helpful since they are closely related to experiments performed on such nanoparticles. This may allow us to improve the stability and efficiency of the semiconductor quantum dot luminescence which is, in fact, considered critical. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:33 / 37
页数:5
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